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Showing items 1-10 of 28 (3 Page(s) Totally)
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| 臺大學術典藏 |
2018-09-10T07:37:20Z |
A comprehensive study of Ge1-xSix on Ge for the Ge nMOSFETs with tensile stress, shallow junctions and reduced leakage
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Huang, S.-C.; Chung, C.-T.; Heh, D.; Chien, C.-H.; Cheng, C.-C.; Lee, Y.-J.; Wu, W.-F.; Hsu, C.-C.; Kuo, M.-L.; Yao, J.-Y.; Chang, M.-N.; Liu, C.-W.; Hu, C.; Chang, C.-Y.; Yang, F.-L.; Luo, G.-L.; CHEE-WEE LIU et al. |
| 臺大學術典藏 |
2020-06-11T06:20:28Z |
A High ION/IOFF Ratio of 6 × 105 in Germanium-Tin n+/p Junctions by Phosphorus Ion Implantation
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Liu, J.-Y.;Chuang, Y.;Liu, C.-Y.;Luo, G.-L.;Li, J.-Y.; Liu, J.-Y.; Chuang, Y.; Liu, C.-Y.; Luo, G.-L.; Li, J.-Y.; JIUN-YUN LI |
| 國立成功大學 |
2017 |
A procedural for preliminarily determining the maximum injection pressure of CO2 sequestration
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Lee, D.-H.;Liao, C.-J.;Wu, J.-H.;Huang, Y.-F.;Luo, G.-L. |
| 臺大學術典藏 |
2018-09-10T08:15:14Z |
Competitiveness between direct and indirect radiative transitions of Ge
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Cheng, T.-H.;Ko, C.-Y.;Chen, C.-Y.;Peng, K.-L.;Luo, G.-L.;Liu, C.W.;Tseng, H.-H.; Cheng, T.-H.; Ko, C.-Y.; Chen, C.-Y.; Peng, K.-L.; Luo, G.-L.; Liu, C.W.; Tseng, H.-H.; CHEE-WEE LIU |
| 國立成功大學 |
2022 |
Demonstration of Monolayer Doping of Five-Stacked Ge Nanosheet Field-Effect Transistors
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Chu, Chu C.-L.;Luo, G.-L.;Chou, D.;Hsu, S.-H. |
| 臺大學術典藏 |
2018-09-10T14:57:35Z |
Effect of surface Si redistribution on the alignment of Ge dots grown on pit-patterned Si(001) substrates
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Lee, C.-H.; Kuan, C.-H.; CHIEH-HSIUNG KUAN; SAO-JIE CHEN; Chen, S.-T.; Lai, Y.-P.; Chen, H.-M.;Suen, Y.-W.;Chen, S.-J.;Luo, G.-L.;Lai, Y.-P.;Chen, S.-T.;Lee, C.-H.;Kuan, C.-H.; Chen, H.-M.; Suen, Y.-W.; Chen, S.-J.; Luo, G.-L. |
| 國立交通大學 |
2015-12-02T02:59:30Z |
Fabricating a n(+)-Ge contact with ultralow specific contact resistivity by introducing a PtGe alloy as a contact metal
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Hsu, C. C.; Chou, C. H.; Wang, S. Y.; Chi, W. C.; Chien, C. H.; Luo, G. L. |
| 國立交通大學 |
2016-03-28T00:04:19Z |
Fabricating a n(+)-Ge contact with ultralow specific contact resistivity by introducing a PtGe alloy as a contact metal (vol 107, 113503, 2015)
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Hsu, C. C.; Chou, C. H.; Wang, S. Y.; Chi, W. C.; Chien, C. H.; Luo, G. L. |
| 國立成功大學 |
2023 |
First Demonstration of Defect Elimination for Cryogenic Ge FinFET CMOS Inverter Showing Steep Subthreshold Slope by Using Ge-on-Insulator Structure
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Yu, X.-R.;Hsieh, C.-C.;Chuang, M.-H.;Chiu, M.-Y.;Sun, T.-C.;Geng, W.-Z.;Chang, W.-H.;Shih, Y.-J.;Lu, W.-H.;Chang, W.-C.;Lin, Y.-C.;Pai, Y.-C.;Lai, C.-Y.;Chuang, M.-H.;Dei, Y.;Yang, C.-Y.;Lu, H.-Y.;Lin, N.-C.;Wu, C.-T.;Kao, Kao K.-H.;Ma, W.C.-Y.;Lu, D.D.;Lee, Y.-J.;Luo, G.-L.;Chiang, M.-H.;Maeda, T.;Wu, Wu W.-F.;Li, Y.-M.;Hou, T.-H. |
| 國立成功大學 |
2022 |
First Demonstration of Vertical Stacked Hetero-Oriented n-Ge (111)/p-Ge (100) CFET toward Mobility Balance Engineering
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Yu, X.-R.;Chang, W.-H.;Hong, T.-C.;Sung, P.-J.;Agarwal, Agarwal A.;Luo, G.-L.;Wu, C.-T.;Kao, Kao K.-H.;Su, C.-J.;Chang, S.-W.;Lu, W.-H.;Fu, P.-Y.;Lin, J.-H.;Wu, P.-H.;Cho, T.-C.;Ma, W.C.-Y.;Lu, D.-D.;Chao, T.-S.;Maeda, T.;Lee, Y.-J.;Wu, Wu W.-F.;Yeh, W.-K.;Wang, Y.-H. |
Showing items 1-10 of 28 (3 Page(s) Totally)
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